 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BYT51. Vishay Semiconductors Standard Avalanche Sinterglass Diode Features * * * * * Glass passivated junction Hermetically sealed package e2 Low reverse current Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 949539 Applications Rectification diode Mechanical Data Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M Type differentiation VR = 50 V; IFAV = 1.5 A VR = 100 V; IFAV = 1.5 A VR = 200 V; IFAV = 1.5 A VR = 400 V; IFAV = 1.5 A VR = 600 V; IFAV = 1.5 A VR = 800 V; IFAV = 1.5 A VR = 1000 V; IFAV = 1.5 A SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M Peak forward surge current Document Number 86028 Rev. 1.7, 14-Apr-05 tp = 10 ms, half sinewave Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM Value 50 100 200 400 600 800 1000 50 Unit V V V V V V V A www.vishay.com 1 BYT51. Vishay Semiconductors Parameter Repetitive peak forward current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 1 A on PC board l = 10 mm Test condition Part Symbol IFRM IFAV IFAV Tj = Tstg ER Value 9 1 1.5 - 55 to + 175 20 Unit A A A C mJ Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse recovery time IF = 1 A IF = 1 A, Tj = 175 C VR = VRRM VR = VRRM, Tj = 150 C IF = 0.5 A, IR = 1 A, iR = 0.25 A Test condition Symbol VF VF IR IR trr Min Typ. 0.95 Max 1.1 1.0 1 100 4 Unit V V A A s Typical Characteristics (Tamb = 25 C unless otherwise specified) RthJA Therm. Resist. Junction/Ambient (K/W) 120 l 100 I F - Forward Current ( A ) l 10 80 60 40 20 0 0 5 10 15 20 25 30 l - Lead Length ( mm ) TL= constant 1 T j = 175C 0.1 Tj = 2 5C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 16323 94 9101 V F - Forward Voltage ( V ) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 86028 Rev. 1.7, 14-Apr-05 BYT51. Vishay Semiconductors 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 RthJA =100 K/W PCB: d = 25 mm R thJA = 45 K/W l = 10 mm P - Reverse Power Dissipation ( mW ) R I FAV - Average Forward Current ( A ) 1.6 350 V R = VRRM 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Tj - Junction Temperature ( C ) PR -Limit @80 % VR PR -Limit @100 % VR 80 100 120 140 160 180 16326 16324 Tamb - Ambient Temperature ( C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1000 V R = VRRM I R - Reverse Current ( A ) CD - Diode Capacitance ( pF ) 45 40 35 30 25 20 15 10 5 f =1 MHz 100 10 1 25 16325 50 75 100 125 150 175 16327 0 0.1 1 10 100 Tj - Junction Temperature ( C ) V R - Reverse Voltage ( V ) Figure 4. Reverse Current vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. Cathode Identification ISO Method E 94 9538 0.82 (0.032) max. 26(1.014) min. 4.0 (0.156) max. 26(1.014) min. Document Number 86028 Rev. 1.7, 14-Apr-05 www.vishay.com 3 BYT51. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 86028 Rev. 1.7, 14-Apr-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of BYT51
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |